碳化硅功率MOSFET高频应用下的栅极氧化层退化状态监测技术

Gate oxide degradation, which considerably affects turn-on/-off dynamics of the switch, embraces a large percentage of chip-related failure modes both in silicon and silicon carbide power MOSFETs. The gate oxide layer is thinner in silicon carbide power MOSFETs in comparison to their silicon-based counterparts. Consequently, the problem of gate oxide degradation has become a more crucial impedimen...