宽禁带器件动态测试的重点与关注点：一项基于问卷的调查

Motivated by the excellent advantages of high switching speed, low on-resistance, and high thermal conductivity, the wide bandgap (WBG) devices, including silicon carbide metal-oxide-semiconductor field-effect transistor and gallium nitride high electron mobility transistors, have received increasing attention. However, the high switching speed of WBG devices also brings more concerns and challeng...