基于数据手册的SiC MOSFET开关损耗、开通/关断过电压、di/dt及dv/dt预测方法

This article presents quick analytical prediction methods of switching loss, turn-on/off overvoltage, di/dt, and dv/dt for SiC metal–oxide–semiconductor field-effect transistor based on device datasheet. First, the switching process is analyzed and the simplification principles are discussed based on charge conservation and flux conservation. Second, the analytical equations of switching loss, tur...