皮秒级4H-SiC二极管雪崩整形器演示：电压上升率达11.14 kV/ns，峰值功率密度达62 MW/cm²

In this letter, for the first time, a high-performance picosecond 4H-SiC diode avalanche shaper (DAS) with a novel ${p^+/p^-/n^+}$ multilayer epitaxial structure is experimentally demonstrated and characterized. For fabrication of our 4H-SiC DAS, the multilayer epitaxial stacks have been designed in detail and grown using continuous multilayer epitaxial wafer growth. To excite the delayed avalanch...