← 返回
通过在漂移区考虑3C-SiC夹层对4H-SiC功率MOSFET双极性退化建模
Modeling of Bipolar Degradations in 4H-SiC Power MOSFET Devices by a 3C-SiC Inclusive Layer Consideration in the Drift Region
| 作者 | Amel Lachichi · Philip Mawby |
| 期刊 | IEEE Transactions on Power Electronics |
| 出版日期 | 2022年3月 |
| 技术分类 | 功率器件技术 |
| 技术标签 | SiC器件 宽禁带半导体 可靠性分析 功率模块 |
| 相关度评分 | ★★★★★ 5.0 / 5.0 |
| 关键词 | 4H-SiC 功率MOSFET 双极性退化 层错 可靠性 漂移区 3C-SiC |
语言:
中文摘要
4H-SiC功率器件的可靠性不仅取决于封装，还受材料缺陷影响。双极性退化是制约高功率MOSFET发展的关键缺陷，主要由六方SiC晶体内的肖克利堆垛层错（SFs）引起。本文通过引入3C-SiC夹层模型，深入分析了该缺陷对器件性能的影响。
English Abstract
The reliability of 4H-SiC power devices accounts not only to power packages but as well to SiC materials which contain defects that impact the performance of power converters. A detrimental material defect that is still hindering the development of high power mosfet devices is the so-called bipolar degradation. It is mainly due to Shockley stacking sequence faults (SFs) within the hexagonal SiC st...
S
SunView 深度解读
SiC器件是阳光电源组串式逆变器、PowerTitan储能系统及电动汽车充电桩提升功率密度和效率的核心。双极性退化直接影响SiC MOSFET的长期运行寿命与可靠性。该研究提出的建模方法有助于研发团队在器件选型与模块设计阶段，更精准地评估SiC芯片在复杂工况下的退化风险。建议将此模型应用于高压SiC功率模块的可靠性筛选标准中，以优化逆变器和PCS产品的长期运维策略，降低iSolarCloud平台监测下的现场故障率。