交流栅极应力下碳化硅功率MOSFET的偏置温度不稳定性

With increasing applications of silicon carbide power MOSFETs, more attention is being paid to reliability issues, among which the long-term stability of the gate threshold voltage is of paramount importance. In this article, laboratory experiments are conducted to investigate the threshold voltage instability under ac gate stresses with different duty ratios, and on and off-state gate voltages. I...