一种具有动态振铃抑制功能的GaN功率HEMT智能栅极驱动IC

Conventional di/dt and dv/dt control and gate protection techniques for gallium nitride (GaN) power transistors usually employ external controllers, isolation circuits, discrete pull-up, and pull-down resistors. With large number of components, power modules become more complex and may introduce additional parasitic. Gate driver ICs with segmented output stages and dynamic gate driving have been r...