纳米离子学驱动的可重构异质结用于先进信息器件

Emerging fields such as autonomous driving, smart manufacturing, and artificial intelligence impose greater demands on electronic information devices in terms of versatility, power consumption, and integration density. Multi-field-induced ion migration has led to the identification of reconfigurable heterojunction devices as potential candidates for next-generation information devices due to their rich physical property modulation capabilities, which exceed those of conventional devices. This Perspective will discuss multi-field-induced ionic and electronic processes, including ion migration, charge trapping, and spin polarization in heterojunction devices with reconfigurable conductance. Applications such as ultrahigh-density memory, in-memory computing, encryption, neuromorphic computing, and perception are also summarized. Finally, current challenges and opportunities for reconfigurable heterojunctions are prospected.