SiC MOSFET短路耐受能力对短路失效时间的依赖性

The aim of this article is to elucidate the short-circuit failure mechanism of SiC metal–oxide–semiconductor field-effect transistors that cause mechanical failure of the interlayer dielectric adjacent to the gate, to find the relationship between the short-circuit withstand capability and short-circuit failure time, and to classify failure modes by the short-circuit failure time. When the short-c...