非对称及双沟槽SiC MOSFET的短路能力预测与失效模式研究

In this article, short-circuit capability prediction and failure mode of 1200-V-class SiC MOSFETs with a double and asymmetric trench structure are proposed under single-pulse short-circuit stress. A short-circuit prediction model is established to evaluate short-circuit withstand time and corresponding critical energy of devices under various dc bus voltages. This model can provide quick predicti...