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用于交流-直流整流的实用无外场超导二极管
Practical field-free superconducting diode for AC–DC rectification
| 作者 | Feng Li · Taichi Sato · Masamitsu Tanaka · Akira Fujimaki |
| 期刊 | Applied Physics Letters |
| 出版日期 | 2025年1月 |
| 卷/期 | 第 127 卷 第 7 期 |
| 技术分类 | 储能系统技术 |
| 技术标签 | SiC器件 |
| 相关度评分 | ★★★★ 4.0 / 5.0 |
| 关键词 | 超导二极管 无外场 非互易超电流 临界参数 全波整流器 |
语言:
中文摘要
本文基于常规Nb薄膜技术,通过集成本征超导相电池与非对称直流超导量子干涉器件,实现了一种无需外加磁场或栅压的实用型无外场超导二极管。该设计利用片上相位偏置打破时间反演对称性,产生非互易超电流,关键参数由Nb薄膜能隙电压(约2.8 mV)及未分流Josephson结的子隙电阻决定。在4.2 K下,正向超电流达168 μA,二极管效率高达40%,综合性能优于此前同类器件。实验还制备并表征了超导全波整流电路,验证了其实际应用潜力。
English Abstract
We demonstrate a practical, field-free superconducting diode based on conventional Nb thin-film technology by integrating an intrinsic superconducting phase battery with an asymmetric DC superconducting quantum interference device. Unlike other approaches that require external magnetic fields or gate voltages to break time-reversal symmetry, our design achieves nonreciprocal supercurrents with on-chip phase bias, making it highly suitable for practical applications. The critical operational parameters, including the backward breakdown voltage and reverse resistance, are well defined by the Nb film gap voltage (∼2.8 mV) and the sub-gap resistance of the un-shunted Nb/Al–AlOx/Nb Josephson junctions. The resulting diode exhibits a forward supercurrent of 168 _μ_ A at 4.2 K, with a diode efficiency reaching 40%, a comprehensive performance exceeding prior field-free superconducting diodes. To validate its practicality, we fabricate and characterize a superconducting full-wave rectifier con
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SunView 深度解读
该超导二极管技术展示了无源整流的新物理机制,但目前需4.2K低温运行,与阳光电源常温功率电子产品存在温度鸿沟。其非互易超电流原理可为ST储能变流器和SG逆变器的SiC二极管设计提供理论启发:通过材料微观结构的非对称性优化器件单向导电特性。该研究的相位偏置概念对功率模块中的寄生参数控制有借鉴意义,但超导技术在光伏、储能等大功率应用中的工程化路径尚不明确。短期内更适合作为前沿技术储备,关注其向室温超导或拓扑半导体器件的演进方向,为下一代低损耗整流技术积累认知。