4H-SiC功率MOSFET雪崩诱导退化建模

In this letter, a model that predicates the degradation of 4H-SiC power metal-oxide-semiconductor field-effect transistors under repetitive avalanche stress is proposed. Since positive charges are injected into the gate oxide interface of the JFET region, the gate-drain capacitance (Cgd) is chosen as the targeted parameter to quantify the avalanche induced degradation. The relationship between the...