通过增加等离子体扩展层提高SiC MPS二极管的浪涌电流能力

In this article, a novel structure design concept [plasma spreading layer (PSL)] is introduced into silicon carbide (SiC) merged PiN Schottky (MPS) diode to improve the surge current capability. Compared to the isolated P+ island design in traditional MPS diode, the P+ islands in the proposed new structure are connected by the P+ plasma spreading layers which can spread bipolar current from P+ isl...