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低温下SOI纳米线MOSFET自加热效应的实验提取
Experimental extraction of self-heating in SOI nanowire MOSFETs at cryogenic temperatures
语言:
中文摘要
摘要 本文采用栅极电阻测温技术，对体硅绝缘层（SOI）纳米线MOSFET在300 K至4.2 K环境温度范围内的自加热效应进行了实验评估。提取了器件沟道区域的温度升高值，并获得了微分热阻，将其作为器件温度的函数进行绘图分析。尽管单根纳米线耗散的功率较低，但随着工作温度的降低，沟道区域的温升从室温下的约6 K增加至低温下的53 K。与宽沟道器件相比，纳米线器件的热阻显著更低；然而，这两类晶体管在极低器件温度下均表现出微分热阻的急剧上升。
English Abstract
Abstract This work presents an experimental assessment of self-heating in SOI nanowire MOSFETs in ambient temperatures ranging from 300 K down to 4.2 K using the gate resistance thermometry technique. The temperature increase in the channel region is extracted, and the differential thermal resistance is obtained and plotted as a function of the device temperature. Despite the lower power dissipated by a single nanowire, the operation temperature decrease causes the temperature rise in the channel to increase from around 6 K at room temperature up to 53 K in the cryogenic range. The thermal resistance is considerably lower in nanowires than in wide-channel devices, although both types of transistors present an abrupt increase in the differential thermal resistance at extremely low device temperatures.
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SunView 深度解读
该SOI纳米线MOSFET自热效应研究对阳光电源SiC功率器件应用具有重要参考价值。研究揭示低温环境下热阻急剧增加现象,这对ST系列储能变流器和SG逆变器在高海拔、极寒地区部署至关重要。纳米线结构展现的更低热阻特性,可指导PowerTitan系统中SiC器件的散热设计优化,特别是三电平拓扑中开关器件的热管理策略。栅极电阻测温技术可集成至iSolarCloud平台,实现功率模块温度的精准监测与预测性维护,提升系统可靠性。