一种具有垂直集成栅极驱动器的无键合线SiC开关单元

In this article, an SiC half-bridge module with an integrated gate driver is demonstrated. A physically and electrically compact integration scheme produces a decrease in the parasitic inductance of the critical switching loops in the circuit. Furthermore, a wire bondless integration scheme was devised for the power devices to keep the interconnect parasitic inductance to very low levels. This was...