通过等离子体处理实现NiO/β-Ga2O3异质结二极管的自对准氮掺杂

Self-aligned nitrogen doping via plasma treatment of NiO/β-Ga2O3 heterojunction diodes

查看原文 · ScienceDirect DOI: 10.1016/j.sse.S0038110125001273

作者	Dongbin Kima · Jongsu Baeka · Yoonho Choia · Junghun Kimb · Hyoung Woo Kimb · Byung Jin Choa
期刊	Solid-State Electronics
出版日期	2025年1月
卷/期	第 229 卷
技术分类	储能系统技术
技术标签	储能系统 SiC器件
相关度评分	★★★★ 4.0 / 5.0
关键词	Self-aligned [Nitrogen plasma](https://www.sciencedirect.com/topics/physics-and-astronomy/nitrogen-plasma "Learn more about Nitrogen plasma from ScienceDirect's AI-generated Topic Pages") treatment (SA-N2) was suggested for the nitrogen doping into β-Ga2O3 and NiO.

语言:

中文摘要

摘要：在本研究中，我们展示了一种通过自对准氮（SA-N2）等离子体处理NiO/β-Ga2O3异质结二极管实现的新型掺杂工艺。经SA-N2等离子体处理后的异质结二极管，其击穿电压从1080 V提高至1731 V，同时保持了超过10^11的高开关电流比（ION/IOFF），并实现了降低的比导通电阻（Ron,sp）。研究发现，SA-N2等离子体处理在阳极周围的β-Ga2O3中形成一个具有电阻特性的区域，起到浅层保护环的作用。此外，确认了掺杂的氮在NiO中充当浅受主，而在β-Ga2O3中则充当深能级受主。该工艺可简便且低成本地应用于异质结结构，有助于进一步提升宽禁带功率器件的性能。

English Abstract

Abstract In this work, we demonstrate a novel doping process via self-aligned nitrogen (SA-N 2 ) plasma treatment of the NiO/β-Ga 2 O 3 heterojunction diodes. The SA-N 2 plasma-treated heterojunction diodes exhibit improved breakdown voltage from 1080 V to 1731 V while maintaining a high on–off ratio ( I ON /I OFF ) exceeding 10 11 and achieving a reduced specific on-resistance ( R on.sp ). It is found that the SA-N 2 plasma treatment forms a resistive region acting as a shallow guard ring in the β-Ga 2 O 3 around the anode. It is also confirmed that doped N plays the role of both a shallow acceptor and a deep acceptor in NiO and β-Ga 2 O 3 , respectively. This process can be easily and cost-effectively applied to the heterojunction structure, contributing to further performance improvement of the wide bandgap power device.

SunView 深度解读

该NiO/β-Ga2O3异质结氮掺杂技术对阳光电源功率器件研发具有重要参考价值。其通过等离子体处理实现耐压提升60%至1731V,同时降低导通电阻,与阳光电源ST系列储能变流器及SG光伏逆变器中的宽禁带器件应用方向高度契合。该自对准掺杂工艺可为公司下一代SiC/GaN器件的边缘终端优化提供新思路,有助于提升PowerTitan等高压储能系统的功率密度和可靠性,推动1500V系统效率突破。