谐振脉冲功率变换器中并联SiC MOSFET的电流均衡研究

Paralleling silicon carbide (SiC) mosfets is a cost-effective solution for increasing pulse current rating. However, the device SiC mosfets mismatch and asymmetrical circuit layout would lead to imbalance current of the paralleled SiC mosfets. In this letter, we propose a passive approach, that is, a coupled inductor instead of the conventional resonant inductor, which is used for a resonant pulse...