1.2-kV, 400-A SiC MOSFET模块短路与过载栅极驱动双重保护方案的设计、分析与讨论

This paper proposes short circuit and overload gate-driver dual-protection scheme based on the parasitic inductance between the Kelvin- and power-source terminals of high-current SiC mosfet modules. The paper presents a comprehensive analysis of the two schemes in question, including worst-case analysis used to assess their parametric dependence due to manufacturing tolerances and temperature vari...