一种用于无线电能传输的具有横向氮化镓肖特基二极管的5.8-GHz高功率高效率整流电路

In this letter, we propose to implement a microwave lateral GaN Schottky barrier diode (SBD) in a designed 5.8-GHz rectifier circuit for future high-power and high-efficiency wireless power transfer. The low-pressure chemical vapor deposition SiN-passivated lateral GaN SBD demonstrates a low turn-on voltage of 0.38 V, a low on-resistance of 4.5 Ω, a low junction capacitance of 0.32 pF at 0-V bias,...