一种具有温度相关参数的SiC MOSFET非分段PSpice模型

A non-segmented PSpice model of silicon carbide metal-oxide semiconductor field effect transistor (SiC mosfet) with temperature-dependent parameters is proposed in this paper, which can improve the model's convergence and temperature characteristics. The non-segmented equations and the parameter-extraction method for the proposed SiC mosfet PSpice model are introduced first. Simulation and experim...