碳化硅功率MOSFET模型：一种基于Levenberg-Marquardt算法的精确参数提取方法

This letter proposes an accurate parameter extraction method based on the Levenberg-Marquardt algorithm for a silicon carbide (SiC) power mosfet model. An improved compact model uses this method to study the static behavior of SiC power mosfets according to the temperature and the input voltage. The simulation results obtained with this proposed method fit perfectly the measurements and accurately...