使用倒装芯片键合碳化硅功率器件的3D无键合线开关单元

This paper presents a three-dimensional (3-D) wire bondless power module using silicon carbide (SiC) power devices. Commercially available SiC power devices are designed for wire bonding. Wire bonds have an inherent parasitic inductance that limits high-frequency switching. This results in an underutilization of the full potential of SiC power devices, which have very low switching losses at high ...