全氮化镓集成共源共栅异质结场效应晶体管

All-GaN-integrated cascode heterojunction field effect transistors were designed and fabricated for power switching applications. A threshold voltage of +2 V was achieved using a fluorine treatment and a metal-insulator-semiconductor gate structure on the enhancement mode part. The cascode device exhibited an output current of 300 mA/mm by matching the current drivability of both enhancement and d...