一种GaN基高频DC-DC变换器寄生电感最小化的多回路方法

Gallium nitride high electron mobility transistors (GaN HEMTs) are promising switching devices in high-efficiency and high-density dc–dc converters due to their fast switching speed and small conduction resistance. However, GaN HEMTs are very sensitive to parasitic inductance because of their high switching speed, low-threshold voltage, and small driving safety margin. Parasitic inductance can cau...