基于高频GaN HEMT的DC-DC变换器设计

Switch-mode power converters commonly operate at switching frequencies from kilohertz to a few megahertz, traditionally relying on silicon-based transistors and control circuitry. However, parasitic limitations in silicon devices constrain further frequency scaling. This article presents a fully gallium nitride (GaN)-based dc–dc converter designed for high-frequency operation. The proposed archite...