氮化镓基同步升压变换器的死区效应及最优死区选择分析模型

It is widely acknowledged that gallium nitride (GaN)-based power switching devices are superior to conventional silicon (Si) devices in terms of lower semiconductor loss and faster switching speed. However, the deadtime related losses in GaN HEMT-based converters can be detrimental if not optimized, especially when operating at very high switching frequencies. This paper proposes an original analy...