带场板结构的GaN HEMT输入、输出及反向电容的物理分析模型

This paper presents an analytical model for input, output, and reverse capacitance of a normally on AlGaN/GaN high-electron mobility transistor (HEMT) with a gate field-plate structure, when the device is in the subthreshold regime. Together with the existing model for the output I-V characteristics, the proposed capacitance model provides the complete set of analytical equations that relate the p...