基于SiC功率器件的6-kVA准Z源逆变器设计流程

This paper presents the design process of a 6-kVA quasi-Z-source inverter built with SiC power devices, in particular, employing SiC MOSFETs and SiC Schottky diodes. The main design target is to find the optimal parameters and a good agreement between the efficiency and power density of the converter. The performance of the system may be influenced not only by the switching frequency but also from...