低压eGaN HEMT开关过程分析模型及损耗计算

This paper proposes an improved analytical switching process model to calculate the switching loss of low-voltage enhancement-mode Gallium Nitride high-electron mobility transistors (eGaN HEMTs). The presented eGaN HEMTs models are more or less derived from silicon MOSFETs models, whereas eGaN HEMTs are different from three aspects: higher switching speed, much more reduced parasitic inductance in...