基于拖尾电流动力学物理描述的串联FS-IGBT电压不平衡建模与分析

The series-connected insulated gate bipolar transistors (IGBTs) always endure a secondary voltage imbalance introduced by the difference of tail current. The state-of-the-art models often oversimplify or neglect key physical processes, such as carrier transport and recombination, leading to inaccurate descriptions of the tail current and complicating the characterization of secondary voltage imbal...