1.2 kV碳化硅功率器件在质子辐照下的辐射硬度研究

This work presents a systematic analysis of proton-induced total ionizing dose(TID)effects in 1.2 kV silicon carbide(SiC)power devices with various edge termination structures.Three edge terminations including ring-assisted junction termina-tion extension(RA-JTE),multiple floating zone JTE(MFZ-JTE),and field limiting rings(FLR)were fabricated and irradiated with 45 MeV protons at fluences ranging from 1×1012 to 1×1014 cm-2.Experimental results,supported by TCAD simulations,show that the RA-JTE structure maintained stable breakdown performance with less than 1%variation due to its effective electric field redistribution by multiple P+rings.In contrast,MFZ-JTE and FLR exhibit breakdown voltage shifts of 6.1%and 15.2%,respectively,under the highest fluence.These results demonstrate the superior radiation tolerance of the RA-JTE structure under TID conditions and provide practical design guidance for radiation-hardened SiC power devices in space and other high-radiation environments.