双层NiO/β-Ga2O3异质结二极管实现2870 V/20 A及12.80 ns反向恢复时间

This work demonstrates a significant advancement in high-power p-NiO/ $\beta $ -Ga2O3 heterojunction diode (HJD) technology. A large-area ( $2\times 2$ mm ${}^{{2}}\text {)}$ HJD is fabricated, achieving a remarkable combination of a 2870-V breakdown voltage (BV) and a 20-A forward current. This performance is enabled by a novel terminal structure incorporating a double-layered p-NiO film. The device exhibits a low specific on-resistance ( ${R}_{\text {on},\text {sp}}\text {)}$ of 14.4 m $\Omega \cdot $ cm2, yielding a high Baliga’s power figure of merit (P-FOM) of 572 MW/cm2 (calculated as P-FOM = BV2/ ${R}_{\text {on},\text {sp}}\text {)}$ . Furthermore, it displays excellent fast-switching characteristics, with an ultrashort reverse recovery time of 12.80 ns and a low reverse recovery charge of 19.70 nC. The surge current capability is confirmed to be 16 A at a voltage of 11.1 V. Temperature-dependent electrical characterization from 298 to 448 K reveals key insights. The forward current and turn-on voltage decrease linearly with increasing temperature, with a zero-temperature coefficient (ZTC) bias point observed at approximately 2.3 V. The reverse leakage current follows a thermally activated mechanism, as evidenced by a linear relationship between its natural logarithm and the reciprocal of absolute temperature behavior characteristic of a conventional p–n junction. These results underscore the broad prospects of Ga2O3 HJDs for next-generation high-voltage and high-power electronic applications.