4H-碳化硅漂移阶跃恢复二极管脉冲发生器的设计与优化

To improve the reverse current of 4H-SiC DSRD, thereby increasing the pulse peak output voltage and reducing the pulse rise time, this paper presents a new dual-power 4H-SiC DSRD pulse generator. The circuit parameters influencing the pulse output characteristics were simulated and analyzed using Sentaurus TCAD software. The optimal forward pumping time for the circuit was determined to be 110 ns, with DC input voltages VCC and V1 set at 700 V and 200 V, respectively. The capacitance and inductance values for the output stage of the 4H-SiC DSRD branch were 20 nF and 100 nH, respectively. Two prepulses were observed on the pulse output voltage and the reasons for their generation were explained separately. To minimize the prepulse time, the forward pumping time should be appropriately controlled. Experimental results show that the high-voltage 4H-SiC DSRD developed in our laboratory can generate high-voltage short pulses, with the peak output voltage of 7.91 kV, the rise time of 1.41 ns, and the rise rate of the output voltage front of 3.93 kV/ns when load is 50Ω. The experimental results are in close agreement with the simulation findings. This study provides valuable insights for the application of 4H-SiC DSRD in high-voltage, short pulse environments.