一种集成栅极驱动器的200°C碳化硅半桥功率模块：开发、性能评估与未来路径

In order to reduce the size, weight, and cost of power electronic systems, a high-temperature silicon carbide (SiC)-based half-bridge power module is proposed in this article. Two gate drivers, which were fabricated on low-temperature co-fired ceramic (LTCC) substrates, are integrated into the power module to reduce the gate loop inductance and size of the power module. The design and fabrication process of the LTCC-based gate driver is presented. In addition, the layout design, simulations, and fabrication materials of the power module are also discussed. High-temperature components and materials were implemented to fabricate the power module, which allows it to operate up to 200~^ C. Double pulse tests (DPTs) were carried out from 25~^ C to 200~^ C to investigate its switching performance. The turn-on and turn-off dv/dt of the power module is from 10 to 15 V/ns, and little degradation was observed at elevated temperatures. While the power module achieves functional integration and promising thermal performance, the operating temperature is limited by the gate driver integrated circuit (IC). A high-temperature gate driver IC will be designed and integrated into the power module in future work to improve thermal reliability. This work provides a critical foundation for the development of high-temperature and high density power modules.