一种基于低温无压纳米铜烧结的高性能大功率双面冷却碳化硅功率模块

Due to its low cost, excellent electrical and thermal properties, high reliability, and resistance to electromigration, nano-Cu sintering paste is regarded as the next-generation die interconnection material for wide-bandgap semiconductor applications. However, there are no experimental reports on the application of nano-Cu sintering in high-power double-sided cooling (DSC) SiC power modules. This work fills this gap by demonstrating the design, fabrication, and performance of a novel high-power DSC SiC MOSFET module based on nano-Cu sintering. Using self-prepared Cu paste and a formic acid-assisted low-temperature pressureless Cu sintering process, a 1200 V/600 A DSC power module is fabricated. When sintered in a formic acid atmosphere at a temperature of 250°C, the porosity of the sintered Cu is only 14.08%, and the shear strength reaches 42.5 MPa, twice that of traditional solder. Furthermore, the module exhibits superior switching performance, with switching losses reduced by more than 20% compared with similarly rated commercial module. Its power density reaches 6.70×10⁴ kW/L, while the total parasitic inductance is only 3.94 nH, a 40.3% reduction compared with commercial module. Additionally, the dense Cu sintering structure and low interfacial thermal resistance significantly enhance the thermal performance of the module, with a junction-to-case thermal resistance as low as 0.035 K/W, representing a 54.5% reduction compared with commercial module. These findings demonstrate the feasibility of applying the nano-Cu sintering process in high-power-density electronic devices.