基于半物理的SiC MOSFET电路仿真模型，可外推至高温

In this study, a SiC MOSFET circuit simulation model capable of predicting ultrahigh-temperature operation, including short-circuit conditions, was developed. A fundamental structure combining MOS and JFET components was derived, enabling the reproduction of limiting processes during short-circuit events. Additionally, physics-based models for bulk phonon scattering, Coulomb scattering, surface phonon scattering, and interface roughness scattering were incorporated. A model for mobile charge carriers influenced by traps was also implemented, allowing for the extrapolation of ultrahigh-temperature behavior based on low-temperature fitting. It was demonstrated that the model can predict not only static and switching characteristics but also short-circuit characteristics. This model is expected to contribute significantly to advanced design challenges, such as short-circuit protection.