碳化硅MOSFET中由重离子辐照诱发的单粒子漏电流退化的分析

The application of silicon carbide MOSFETs (SiC MOSFETs) in space is severely restricted by single-event burnout (SEB) and single-event leakage current (SELC) induced by heavy ions, yet the damage mechanisms remain unclear. In this study, Kr ion irradiation was conducted on SiC MOSFETs under varying drain bias voltages. It was observed that the drain current continuously increased during the irradiation process, indicating the occurrence of SELC in the device. By analyzing the changes in the electrical performance of SiC MOSFETs before and after irradiation, it was proposed that the cause of SELC might be the damage to the oxide layer of the device. ERETCAD simulation was used to emulate the leakage path and damage mechanism. The simulation results were verified through analysis using emission microscopy (EMMI) and transmission electron microscopy (TEM), revealing the damage mechanism of heavy-ion radiation-induced SELC in SiC MOSFETs. This study lays a foundation for a deeper understanding of the SEB and SELC mechanisms in SiC MOSFETs.