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基于金刚石散热器封装的热-力分析与优化以提升GaN HEMT性能
Thermal-Mechanical Analysis and Optimization of Diamond Heat Sink Packaging for Enhancing GaN HEMT Performance
| 作者 | Peng Pan · Zujun Peng · Ke Li · Wei Wang |
| 期刊 | IEEE Transactions on Electron Devices |
| 出版日期 | 2025年9月 |
| 技术分类 | 储能系统技术 |
| 技术标签 | 储能系统 GaN器件 可靠性分析 |
| 相关度评分 | ★★★★★ 5.0 / 5.0 |
| 关键词 | 金刚石散热片 功率芯片 氮化镓高电子迁移率晶体管 散热性能 可靠性 |
语言:
中文摘要
本研究分析了以金刚石为散热基板的功率芯片封装结构的热-力特性，显著提升了GaN HEMT的性能。通过优化纳米银焊膏焊接工艺，实现了芯片与金刚石散热体间的可靠集成，有效增强了热点区域的散热能力。理论模拟表明，相较于传统MoCu散热器，金刚石散热器具有更优的散热性能和更低的热应力。实验结果表明，在27.3 W功耗下，结到壳的热阻降低53.4%，芯片表面最高温度下降45.3%，直流输出电流提升9.2%，且功率循环寿命超过33万次无失效，验证了金刚石散热封装在提升高功率器件热电性能与可靠性方面的有效性。
English Abstract
This study analyzes the thermal-mechanical properties of a power chip package structure using diamond as a heat sink and demonstrates significant performance improvements in GaN HEMTs. Reliable integration between power chips and diamond heat sinks was achieved through optimized nanosilver paste welding, enabling efficient heat dissipation near hot spot. Theoretical simulations showed that diamond heat sinks provided superior heat dissipation and lower thermal stress compared with traditional MoCu heat sinks. Experimental validation with fabricated GaN HEMT chips revealed a 53.4% reduction in the junction-to-case thermal resistance, 45.3% lower maximum chip surface temperature under 27.3 W power dissipation, 9.2% increase in dc output current, and a power cycling lifetime exceeding 330 000 cycles without failure. These findings demonstrate the effectiveness of diamond heat sink packaging in enhancing the thermoelectric performance and reliability of high-power chips.
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SunView 深度解读
该金刚石散热封装技术对阳光电源功率器件热管理具有重要应用价值。在ST系列储能变流器和SG系列光伏逆变器中，GaN HEMT器件的高功率密度应用面临严峻散热挑战。研究展示的金刚石散热方案可使结壳热阻降低53.4%、芯片温度下降45.3%，直接提升器件电流输出能力9.2%，这对提高PowerTitan储能系统的功率密度和三电平拓扑模块的过载能力至关重要。超33万次功率循环寿命验证了其在户外严苛环境下的可靠性，可显著延长储能变流器和充电桩功率模块的使用寿命。纳米银焊接工艺与金刚石基板的组合为阳光电源下一代高功率密度GaN/SiC模块封装提供了可行的技术路径。