超宽禁带半导体器件的新兴热学计量技术

Ultrawide bandgap (UWBG) semiconductor materials, such as β−Ga2O3 (gallium oxide), AlN (aluminum nitride), AlxGa1−xN (AlGaN), and diamond, have emerged as essential candidates for components in high-power, high-frequency applications due to their superior electronic properties. However, with the exception of diamond and AlN, these materials present unique thermal management challenges, primarily because of their low thermal conductivities that are incapable of managing the demand for high power densities. Therefore, novel thermal management approaches that feature new device architectures are needed to prevent excessively high peak temperatures in UWBG devices. In parallel, accurate device-level thermal characterization (with high spatial/temporal resolution) is crucial to verify and optimize these designs with an overall goal to improve device performance and reliability. This paper discusses current thermal metrology techniques used for UWBG semiconductor devices covering: optical me