r-GeO2薄膜的透射电子显微镜研究

Ultrawide bandgap semiconductors are promising for the next-generation power electronics, largely attributed to their substantial bandgap and exceptional breakdown electric field. Rutile GeO2 (r-GeO2) emerges as a promising alternative, particularly because of its ambipolar dopability. However, research on r-GeO2 is still in its infancy, and further investigation into its structural properties is essential for enhancing epilayer quality. In our previous work, we identified distinct surface morphologies—square-patterned and smooth regions—of r-GeO2 films grown on r-TiO2 (001) substrates using metal-organic chemical vapor deposition. This research employs transmission electron microscopy to investigate the structural characteristics of the material. The findings indicate that the square-patterned regions are crystalline, whereas the smooth regions exhibit amorphous properties. The measured lattice spacing in the (110) plane is 0.324 nm, slightly exceeding the theoretical value of 0.312 n