基于6英寸Si的MIS p-GaN隧穿栅HEMT：一种提升栅极可靠性的新方法

To enhance gate swing and reduce gate leakage in p-GaN gate high electron mobility transistors (HEMTs), this work introduces novel metal-insulator–semiconductor (MIS) p-GaN tunneling gate HEMTs with an ultrathin Al2O3 tunneling layer. By varying the oxygen sources of atomic layer deposition (ALD), as well as the Al2O3 thickness of the MIS structure, we demonstrate the following results: 1) overdose hydrogen introduced by Al2O3 deposition using H2O as oxygen source severely deactivates the Mg dopants, negatively shifts the threshold voltage V_ TH , and undermines the dynamic performance; 2) the MIS structure can effectively boost the forward bias gate breakdown voltage V_ G-BD ; 3) thick Al2O3 insulator of the MIS structure can, however, undermine the dynamic stability; and 4) MIS p-GaN tunneling gate HEMTs, with a 3-nm ultrathin Al2O3 insulator deposited using O3 as the oxygen source, exhibit an improved V_ G-BD from 12 to 13.2 V, a suppressed gate leakage, an optimized V_ TH from 1.8 to 2.2 V, and unaffected V_ TH stability and dynamic R_ on performances. This work not only exposes the drawbacks of the traditional MIS p-GaN gate HEMTs but also proposes a novel MIS p-GaN tunneling gate structure to dedicatedly balance the static and dynamic performance, thus providing a new option for fabricating high-reliability HEMTs.