理解平面SiC功率MOSFET在雪崩击穿后第三象限工作期间反向导通电压正向偏移的机制

In this study, we explore the stability of third-quadrant characteristics in planar SiC power MOSFETs under high drain bias above the avalanche breakdown condition. By using experimental measurements and TCAD simulations, we analyze the mechanisms responsible for the positive shift of reverse turn-on voltage ( V_ rev, {on} ) during the third-quadrant operation. When the drain bias is increased from 1500 to 1620 V, obvious negative shifts in threshold voltage ( V_ TH ) and positive shifts in V_ rev, {on} are observed. The TCAD simulations attribute these shifts to the impact ionization caused by the high electric field inside the p-well regions. Furthermore, with the inclusion of positive fixed charges as the hole traps in the gate oxide near the SiO2/SiC interface, the simulation results show positive shifts of V_ rev, {on} consistent with the experimental results. These findings suggest that hole trapping caused by high drain bias above the avalanche breakdown condition can affect the stability of third-quadrant operation in planar SiC power MOSFETs.