一种带有被动触发钳位电路的SiC MOSFET新型电平转换驱动器

Compared to the traditional Si devices, SiC devices can operate with much faster switching speed. Therefore, SiC is more popular in the automotive industry as a replacement for Si devices. However, much higher dv/dt will be inevitably induced due to the increased switching speed, which leads to more serious crosstalk issues. In this article, a novel gate driver with a tunable negative voltage and miller clamping circuit is proposed. At first, a level shift circuit, which consists of low-cost passive elements is used to produce tunable negative voltages. Second, a passive triggered miller clamping circuit involving two n-channel mosfets is proposed to provide a low impedance path for the crosstalk current igd. This part of the circuit takes advantage of low cost and less complexity in implementation and design. Then, a comprehensive simulation comparison of the novel level shifter is conducted. Finally, the double-pulse test experiments demonstrate the switching performance and crosstalk suppression performance of the proposed gate driver.