SiC MOSFET多芯片并联功率模块热网络模型的快速修正方法

In this paper, a fast correction method for multi-chip, parallel thermal network models of SiC MOSFETs, taking thermal diffusion and thermal coupling into account is proposed. The approach effectively addresses the need for rapid and precise assessment of the junction temperature of the parallel chip within the power module, thereby enhancing the guidance for the thermal dissipation performance of the power module.