优化肖特基势垒二极管：PVC及PVC：钼中间层在电物理特性中的作用

In this research, the n-Si wafer is used to generate Au/n-Si (C 0 ), Au/PVC/n-Si (C 1 ), and Au/PVC: Molybdenum (Mo)/n-Si (C 2 ) structures to examine the effects of PVC and PVC:Mo interlayers on the electrophysical characteristics of Schottky barrier diodes (SBDs). The mean crystallite size of the Mo nanostructure is computed by X-ray diffraction (XRD) spectroscopy. The I-V data is used to derive the electrical properties of these structures. These diodes’ current conduction mechanisms (CCMs) and energy-dependent distributions of surface states (N ss ) are obtained. By reducing the ideality factor (n), series resistance (R s ), N ss , and leakage current (I 0 ), as well as raising R sh together with barrier height (BH), the usage of PVC and Mo-doped PVC interfacial polymer layers improves the performance of SBDs. Capacitance/conductance-frequency (C/G-f) measurements are used to study the dielectric constant (ε′)/loss (ε′′) and ac electrical conductivity (σ ac ) in a wide frequency range. The negative capacitance/dielectric origin at low frequencies is thoroughly discussed.