Ag/TiO₂和Ag/Ag掺杂TiO₂纳米多孔肖特基势垒二极管的表面与电学表征

In this study, both structural and basic electrical characterizations (current–voltage) of Ag/TiO 2 and Ag/Ag-doped TiO 2 Schottky barrier diode were performed. Anodic oxidation (AO) was used to obtain the TiO 2 layer and physical vapor deposition (PVD) and AO methods were used for Ag (silver) doping. Then, a group of coatings was heat treated at 450 °C to see the effect of the heat treatment and to make comparisons between samples. Ag (silver) rectifier contacts were deposited on the produced active layers and finally Ag/TiO 2 , Ag/TiO 2 (annealed), Ag/Ag-doped TiO 2 and Ag/Ag-doped TiO 2 (annealed) Schottky barrier diodes were obtained. The I-V , semi-logarithmic I-V and double logarithmic I-V characterizations of the Schottky barrier diodes were investigated in depth and the effect of Ag doping and annealed was discussed in detail. With the effect of annealing, both pure TiO 2 and Ag-doped TiO 2 -based Schottky barrier diodes rectification ratio values increased. This shows that the diode property improves after annealing. The diode ideality factor ( n ) values of Ag/TiO 2 , Ag/TiO 2 (annealed), Ag/Ag-doped TiO 2, and Ag/Ag-doped TiO 2 (annealed) Schottky barrier diode are 1.27, 1.18, 1.07, and 2.58, barrier height ( \({\phi }_{b}\) ) values of those are 1.2 eV, 0.94 eV, 0.85 eV, and 0.93 eV, and saturation current ( \({I}_{0}\) ) values of those are 1.21×10 –14 A, 2.47×10 –10 A, 9.77 × 10 –9 A, and 3.47×10 –10 A, respectively. TiO 2 and Ag-doped TiO 2 -based diodes were found to be almost ideal diodes. Heat treatment reduced the ideality factor and barrier height in pure TiO 2 -based devices.