一种用于碳化硅功率MOSFET栅氧化层退化的栅极驱动级隔离监测技术

Gate oxide degradation accounts for one of the major chip-related failure modes both in Silicon (Si) and Silicon Carbide (SiC) power metal-oxide semiconductor field-effect transistors (mosfets). Due to the thinner structure of the gate oxide layer as well as reduced conduction band offset between SiC and SiO$_{2}$ in SiC mosfets, device failure with the root cause of gate oxide degradation is more...