用于GaN器件串扰抑制且具有低反向导通损耗的三电平栅极驱动电路

The crosstalk problem in gallium nitride (GaN) based bridge configuration limits the high-switching speed and high-frequency applications of GaN devices at high-voltage levels. A three-level gate drive for crosstalk suppression with low reverse conduction loss during both dead times at turn-on and turn-off is proposed in this article. The capacitor-NMOS circuit provides a low-impedance Miller curr...