← 返回

利用GaN/Si混合开关抑制动态导通电阻以提升Buck变换器效率

Enhancing Buck Converter Efficiency by Using GaN/Si Hybrid Switches to Suppress Dynamic On-State Resistance

语言:

中文摘要

本文证明了采用GaN/Si混合开关的Buck变换器比同规格纯GaN开关具有更高的转换效率。通过将并联GaN HEMT中的一个替换为同电压等级但电阻稍高的Si超结MOSFET,可显著降低总导通损耗并抑制动态导通电阻效应。

English Abstract

In this work, it is demonstrated that the buck converter using a GaN/Si hybrid switch can achieve an even higher power conversion efficiency than the one using a pure-GaN switch with the same ratings. By replacing one of the dual paralleled GaN HEMTs with a Si superjunction mosfet having the same voltage rating yet a slightly higher resistance, the total conduction loss, however, is significantly ...
S

SunView 深度解读

该技术对阳光电源的户用光伏逆变器及小型储能PCS产品具有重要参考价值。在追求高功率密度和高效率的趋势下,GaN器件的动态导通电阻(Current Collapse)一直是限制其在功率变换中应用的关键痛点。通过GaN/Si混合拓扑,可以在不显著增加成本的前提下,优化变换器在不同负载下的效率表现。建议研发团队在下一代高频化、小型化户用逆变器或微型逆变器设计中,评估该混合开关方案在降低温升和提升整机效率方面的潜力,以进一步增强产品在紧凑型应用场景下的竞争力。