p-GaN HEMT与反并联横向整流器的单片集成以降低负阻效应

p-GaN high electron mobility transistors (HEMTs) are favored for bridge topology applications where they act as the freewheeling transistors to commute the current during the dead time. However, the ${{i}_{DS}}$, ${{v}_{DS}},$ and ${{v}_{GS}}$ oscillations at this period are observed and may introduce electromagnetic interference problems. In this article, we have demonstrated the presence of the ...